Infineon IRF3315PBF

Name: Infineon IRF3315PBF
Brand: Infineon
SKU: IRF3315PBF

Single N-Channel 150 V 0.082 Ohm 95 nC HEXFET® Power Mosfet - TO-220-3

$ 0.49

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF3315PBF	244	1	Bulk	0.490	0.490	0.490	0.490	0.490	15h
Farnell	2	IRF3315PBF	0	1		1.754*	1.373*	1.010*	0.855*	0.855*	23h
Microchip USA		IRF3315	242	600	Tube				1.725	1.725	15h
Win Source	2	WS-604274	20	40				1.320	1.073	1.073	23h
Worldway Electronics	2	IRF3315	19,404	7	Tube		0.881	0.854	0.809	0.809	22h

数据表和文档

下载 Infineon IRF3315PBF 的数据表和制造商文档。

IHS

Datasheet9 页16 年前

Datasheet8 页16 年前

Datasheet9 页27 年前

Newark

Sierra IC

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

-8.96%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-06-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-10-31

LTD Date2021-04-30

描述

由其分销商提供的 Infineon IRF3315PBF 的描述。

Single N-Channel 150 V 0.082 Ohm 95 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A) | MOSFET N-CH 150V 27A TO-220AB

Win Source

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

MOSFET, 150V, 21A, 70 mOhm, 63.3 nC Qg, TO-220AB

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 136 W

Distrelec

Power Field-Effect Transistor, 27A I(D), 150V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, 150V, 21A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:150V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:136W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:27A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.6°C/W; Package / Case:TO-220AB; Power Dissipation Pd:136W; Power Dissipation Pd:136W; Pulse Current Idm:108A; Termination Type:Through Hole; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC