备用零件
Price @ 1000
$ 1.111
$ 0.733
Stock
264,115
412,037
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
45 A
45.6 A
Threshold Voltage
4 V
4 V
Rds On Max
40 mΩ
42 mΩ
Gate to Source Voltage (Vgs)
30 V
25 V
Power Dissipation
220 W
210 W
Input Capacitance
3.03 nF
3.25 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-10-13
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FQP45N15V2 的描述。
Power MOSFET, N-Channel, QFET®, 150 V, 45 A, 40 mΩ, TO-220
Single N-Channel 150 V 0.04 Ohm 94 nC 220 W DMOS Flange Mount Mosfet - TO-220-3
Trans MOSFET N-CH 150V 45A 3-Pin(3+Tab) TO-220AB Rail
150 V N-CHANNEL MOSFET Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:150V; On Resistance Rds(on):34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:220W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:45A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:40mohm; Package / Case:TO-220; Power Dissipation Pd:220W; Power Dissipation Pd:220W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)45 A
Current45 A
Current Rating45 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time246 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.03 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation220 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation220 W
Rds On Max40 mΩ
Resistance40 mΩ
Rise Time232 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time224 ns
Turn-On Delay Time22 ns
Voltage150 V
Voltage Rating (DC)150 V
Dimensions
Height20.4 mm
Length10.1 mm