Infineon IRFB33N15DPBF

Name: Infineon IRFB33N15DPBF
Brand: Infineon
SKU: IRFB33N15DPBF

Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A) | MOSFET N-CH 150V 33A TO-220AB

$ 2.74

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFB33N15DPBF	0	5	Bulk		3.050	2.740	2.740	2.740	12h
Farnell		IRFB33N15DPBF	0	1		2.345*	2.345*	2.345*	2.345*	2.345*	6h
Microchip USA	2	IRFB33N15DPBF	396	300	Bulk				5.265	5.265	1d
Win Source	2	WS-IRFB33N15DPBF	13,100	45				1.291	0.861	0.861	20h
Worldway Electronics	2	IRFB33N15DPBF	17,808	7	Tube		0.875	0.848	0.803	0.803	2d

数据表和文档

下载 Infineon IRFB33N15DPBF 的数据表和制造商文档。

IHS

Datasheet12 页21 年前

Datasheet13 页21 年前

Datasheet12 页25 年前

Newark

iiiC

DigiKey

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-04-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-10-31

LTD Date2021-04-30

描述

由其分销商提供的 Infineon IRFB33N15DPBF 的描述。

Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A) | MOSFET N-CH 150V 33A TO-220AB

Win Source

Single N-Channel 150 V 56 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

N CH MOSFET, 150V, 33A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:56ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:130A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon