Infineon IRFB41N15DPBF

Name: Infineon IRFB41N15DPBF
Brand: Infineon
SKU: IRFB41N15DPBF

Mosfet, Power; N-ch; Vdss 150V; Rds(on) 0.045 Ohm; Id 41A; TO-220AB; Pd 200W; Vgs +/-30V

$ 4.94

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFB41N15DPBF	0	250	Bulk				4.940	4.280	6h
Farnell		IRFB41N15DPBF	0	1		1.275*	0.954*	0.743*	0.743*	0.743*	13h
Microchip USA		IRFB41N15D	50	600	Tube				1.666	1.666	1d
Win Source	2	WS-IRFB41N15DPBF	4,298	35				1.373	1.116	1.116	14h
Worldway Electronics	2	IRFB41N15DPBF	9,380	7	Tube		1.478	1.433	1.358	1.358	1d

数据表和文档

下载 Infineon IRFB41N15DPBF 的数据表和制造商文档。

IHS

Datasheet13 页9 年前

Datasheet13 页19 年前

Datasheet13 页22 年前

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-11-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFB41N15DPBF 的描述。

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.045Ohm;ID 41A;TO-220AB;PD 200W;VGS +/-30V

RS (Formerly Allied Electronics)

Single N-Channel 150 V 0.045 Ohm 72 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

Distrelec

Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon

MOSFET, N, 150V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:41A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:164A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

element14 APAC