价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | IRFP150A | 3,489 | 268 | |||||||||
| Rochester Electronics | IRFP150A | 3,489 | 22h | |||||||||
| Flip Electronics | IRFP150A | 2,250 | 6d | |||||||||
| Microchip USA | IRFP150A | 113 | 600 | Bulk | 14h | |||||||
| Win Source | WS-462161 | 77,800 | 24 | 23h |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-06-06
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
描述
由其分销商提供的 onsemi IRFP150A 的描述。
N-Channel 100 V 40 mOhm 97 nC Through Hole Advanced Power Mosfet - TO-3P
Trans MOSFET N-CH 100V 43A 3-Pin(3+Tab) TO-3P(N) Rail
N-CH/100V/40A/0.04OHM/Substitute of IRFP150 & IRFP150N
Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Af 100V 40Mohm To3Pn Rohs Compliant: Yes
100V 43A 40m´Î@10V21.5A 193W 4V@250uA 185pF@25V 1.75nF@25V 75nC@10V -55¡Í~+175¡Í@(Tj) TO-3P MOSFETs ROHS
PFET, 43A I(D), 100V, 0.04OHM, 1
IRFP150A.,3LD PLAS EXPOSED HEA T SINK <AZ
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)43 A
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.27 nF
Max Operating Temperature175 °C
Max Power Dissipation193 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation193 W
Rds On Max40 mΩ
Resistance40 MΩ
Rise Time20 ns
Turn-Off Delay Time80 ns
Turn-On Delay Time17 ns