备用零件
Price @ 1000
$ 29.275
$ 26.265
Stock
21,266
8,266
Authorized Distributors
2
3
Mount
Through Hole
Through Hole
Case/Package
TO-3
TO-3
Drain to Source Voltage (Vdss)
400 V
400 V
Continuous Drain Current (ID)
14 A
14 A
Threshold Voltage
-
4 V
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
150 W
150 W
Input Capacitance
-
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-29
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Infineon JANTX2N6768 的描述。
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Single N-Channel 400 V 150 W 110 nC Hexfet Transistor Through Hole - TO-3
100V THRU 500V, UP TO 38A, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 2TO-204
Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Terminals2
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)400 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance300 mΩ
PackagingBulk
Power Dissipation150 W
Schedule B8541290080