Infineon IRF250

Name: Infineon IRF250
Brand: Infineon
SKU: IRF250

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

$ 24.885

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Future Electronics		IRF250	0	100	Tray			24.840	24.840	24.840
Arrow Electronics		IRF250	0	100				24.930	24.930	24.930
Farnell		IRF250	0	1		30.073*	30.073*	14.172*	12.013*	12.013*	1d
Microchip USA		IRF250	346	50	Tray			33.759	33.759	33.759	5d
Worldway Electronics	2	IRF 250	14,115	7							1h

数据表和文档

下载 Infineon IRF250 的数据表和制造商文档。

IHS

Datasheet7 页25 年前

库存历史记录

3 个月趋势:

-100%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装	3D	下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1990-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF250 的描述。

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Infineon

Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

SHENGYU ELECTRONICS

MOSFET, N, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Current Temperature:25°C; Device Marking:IRF250; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC