Infineon IRF1405SPBF

Name: Infineon IRF1405SPBF
Brand: Infineon
SKU: IRF1405SPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 4.6MILLIOHMS; Id 131A; D2PAK; Pd 200W; Vgs +/-2

$ 3.43

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF1405SPBF	0	1	Bulk	3.810	3.430	3.430	3.430	3.430	12h
Farnell	IRF1405SPBF	0	1		5.856*	5.856*	2.779*	2.358*	2.358*	5h
Win Source	WS-IRF1405SPBF	3,650	20				2.052	1.721	1.721	20h
Worldway Electronics	IRF1405SPBF	9,227	7	Tube		1.103	1.070	1.013	1.013	19h
Anlinkda	IRF1405SPBF	52,302			0.513	0.459	0.421	0.403	0.392	1h

数据表和文档

下载 Infineon IRF1405SPBF 的数据表和制造商文档。

Newark

Datasheet11 页15 年前

Datasheet12 页21 年前

Datasheet11 页21 年前

IHS

Factory Futures

RS (Formerly Allied Electronics)

DigiKey

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2001-01-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRF1405SPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 131A;D2Pak;PD 200W;VGS +/-2

RS (Formerly Allied Electronics)

Single N-Channel 55 V 5.3 mOhm 170 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK

Avnet

Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N Channel Mosfet, 55V, 131A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:131A; On Resistance Rds(On):0.0053Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

Newark

MOSFET, N, 55V, 131A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:131A; Resistance, Rds On:0.0053ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Case Style, Alternate:D2-PAK; Current, Idm Pulse:680A; Power Dissipation:200W; Power, Pd:200W; Resistance, Rds on @ Vgs = 10V:0.0053ohm; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds:55V; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V

Farnell