Infineon IRF1405STRLPBF

Name: Infineon IRF1405STRLPBF
Brand: Infineon
SKU: IRF1405STRLPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 4.6MILLIOHMS; Id 131A; D2PAK; Pd 200W; Vgs +/-2

$ 1.175

Production

制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Avnet		IRF1405STRLPBF	105,600	800					0.842	0.807	1d
Newark	3	IRF1405STRLPBF	3,764	1	Cut Tape	3.740	2.570	1.910	1.910	1.910
Arrow Electronics	4	IRF1405STRLPBF	4,800	1		2.674	1.808	1.451	1.020	1.020
Future Electronics	2	IRF1405STRLPBF	17,600	800	Tape & Reel				1.140	1.110
Rutronik		TMOSP11712	800	800					1.024	0.980	21h

数据表和文档

下载 Infineon IRF1405STRLPBF 的数据表和制造商文档。

IHS

Datasheet11 页15 年前

Newark

RS (Formerly Allied Electronics)

Jameco

DigiKey

库存历史记录

3 个月趋势:

-8.75%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-05-27

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF1405STRLPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 131A;D2Pak;PD 200W;VGS +/-2

RS (Formerly Allied Electronics)

Single N-Channel 55 V 5.3 mOhm 260 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 55V 131A D2PAK

Win Source

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

IRF1405STRLPBF,MOSFET, 55V, 13 1A, 5.3 MOHM, 170 NC QG, D2-P

Jameco

Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:131A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:200W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF1405STRLPBF.

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 131 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 5.3 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 190 / Turn-OFF Delay Time ns = 130 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200

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