价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF1405STRRPBF | 38,913 | 8h | |||||||||
| RS (Formerly Allied Electronics) | IRF1405STRRPBF | 0 | 800 | Bulk | 1d | |||||||
| Verical | IRF1405STRRPBF | 513 | 202 | |||||||||
| Win Source | WS-IRF1405STRRPBF | 3,730 | 20 | 9h | ||||||||
| Worldway Electronics | IRF1405STRRPBF | 17,507 | 7 | Tape & Reel | 8h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
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描述
由其分销商提供的 Infineon IRF1405STRRPBF 的描述。
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 131A;D2Pak;PD 200W;VGS +/-2
Single N-Channel 55V 5.3 mOhm 170 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:131A; On Resistance, Rds(on):5.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating131 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance5.3 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.48 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance5.3 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max5.3 mΩ
Resistance5.3 MΩ
Rise Time190 ns
Schedule B8541290080
Turn-Off Delay Time130 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)55 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm