备用零件
Price @ 1000
$ 0.614
$ 0.813
Stock
241,105
94,049
Authorized Distributors
2
2
Mount
Surface Mount
-
Case/Package
TO-252-3
-
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
6 A
6 A
Threshold Voltage
-
-
Rds On Max
660 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
63 W
63 W
Input Capacitance
615 pF
-
供应链
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-04-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2020-09-30
LTD Date2021-03-31
相关零件
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N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
描述
由其分销商提供的 Infineon IPD65R660CFDBTMA1 的描述。
Trans MOSFET N-CH 650V 6A 3-Pin(2+Tab) DPAK T/R
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO252-3, RoHS
Infineon SCT
MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD65R660 - 650V AND 700V COOLMO
MOSFET, N-CH, 650V, 6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.594ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: -; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CFD2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)6 A
Drain to Source Resistance660 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance615 pF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation62.5 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance660 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation63 W
Rds On Max660 mΩ
Rise Time8 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time9 ns