Infineon IPD65R660CFDATMA1

Name: Infineon IPD65R660CFDATMA1
Brand: Infineon
SKU: IPD65R660CFDATMA1

Trans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R

$ 0.813

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPD65R660CFDATMA1	14,296					0.979	0.813	0.724	23h
Farnell	2	IPD65R660CFDATMA1	0	1	Cut Tape	1.725*	1.494*	1.247*	1.031*	0.944*	9h
Microchip USA		IPD65R660CFDATMA1	324	300					5.326	5.326	16h
Verical	2	IPD65R660CFDATMA1	13,469	307					1.016	0.906
Worldway Electronics		IPD65R660CFDATMA1	9,912	7	Tape & Reel		0.230	0.223	0.211	0.211	23h

数据表和文档

下载 Infineon IPD65R660CFDATMA1 的数据表和制造商文档。

IHS

Datasheet21 页0 年前

element14 APAC

TME

库存历史记录

3 个月趋势:

+0.00%

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InfineonIPD65R660CFDATMA1

InfineonIPD65R660CFDBTMA1

Price @ 1000

$ 0.813

$ 0.614

Stock

94,046

241,106

Authorized Distributors

2

Mount

-

Surface Mount

Case/Package

-

TO-252-3

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

6 A

Threshold Voltage

-

Rds On Max

-

660 mΩ

Gate to Source Voltage (Vgs)

-

20 V

Power Dissipation

63 W

Input Capacitance

-

615 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-01-20

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IPD65R660CFDATMA1 的描述。

Trans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R

Verical

Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 650V, 6A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.594ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 62.5W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CFD2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Infineon