Infineon IPD60R600P6ATMA1

Name: Infineon IPD60R600P6ATMA1
Brand: Infineon
SKU: IPD60R600P6ATMA1

Trans Mosfet N-ch 600V 7.3A 3-PIN(2+TAB) Dpak T/r / Mosfet N-ch 600V 7.3A TO252

$ 0.522

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价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics		IPD60R600P6ATMA1	5,000	2500						0.433
Rochester Electronics		IPD60R600P6ATMA1	5,037					0.527	0.437	0.390	18h
DigiKey	3	IPD60R600P6ATMA1CT-ND	4,486	1	Cut Tape	1.720	1.089	0.727	0.522	0.522
Newark		IPD60R600P6ATMA1	0	5	Cut Tape		1.220	0.885	0.694	0.694
Future Electronics	2	IPD60R600P6ATMA1	0	2500	Tape & Reel					0.360

数据表和文档

下载 Infineon IPD60R600P6ATMA1 的数据表和制造商文档。

IHS

Datasheet18 页0 年前

Datasheet19 页0 年前

Datasheet18 页0 年前

Upverter

Farnell

库存历史记录

3 个月趋势:

-20.66%

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供应链

Country of OriginAustria, Germany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-06-07

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

LTB Date2015-09-15

LTD Date2015-12-15

描述

由其分销商提供的 Infineon IPD60R600P6ATMA1 的描述。

Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 7.3A TO252

Win Source

Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Infineon

MOSFET, N-CH, 600V, 7.3A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P

Farnell