供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-08-08
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
相关零件
STMicroelectronicsSTD7ANM60N
N-channel 600 V, 5 A, 0.84 Ohm typ., MDmesh(TM) II Power MOSFET in DPAK package
描述
由其分销商提供的 Infineon IPD60R460CEATMA1 的描述。
Trans MOSFET N-CH 650V 9.1A 3-Pin TO-252 T/R
Trans MOSFET N-CH 600V 13.1A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 600V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-Channel 600 V 9.1A (Tc) 74W (Tc) Surface Mount PG-TO252-3
74W(Tc) 20V 3.5V@ 280¦ÌA 28nC@ 10 V 1N 600V 460m¦¸@ 3.4A,10V 9.1A 620pF@100V TO-252 6.5mm*6.22mm*2.3mm
COOLMOS N-CHANNEL POWER MOSFET
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)13.1 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance460 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance620 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Breakdown Voltage600 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation30 W
Rds On Max460 mΩ
Rise Time9 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time11 ns
Dimensions
Height2.55 mm