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描述
由其分销商提供的 Infineon IPD60R520CPATMA1 的描述。
Trans MOSFET N-CH 600V 6.8A 3-Pin TO-252 T/R
Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
COOLMOS N-CHANNEL POWER MOSFET
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)6.8 A
Drain to Source Resistance520 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance630 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation66 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max520 mΩ
Rise Time12 ns
Turn-Off Delay Time74 ns
Turn-On Delay Time17 ns