供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-03-13
Lifecycle StatusProduction (Last Updated: 5 months ago)
相关零件
InfineonIPB100N06S205ATMA4
55V, N-Ch, 4.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
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40V, N-Ch, 3.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
STMicroelectronicsSTB170NF04
Automotive-grade N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK package
描述
由其分销商提供的 Infineon IPB80N06S2H5ATMA2 的描述。
Power MOSFET, N Channel, 55 V, 80 A, 0.0052 ohm, TO-263 (D2PAK), Surface Mount
55V, N-Ch, 5.2 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
Infineon SCT
Mosfet, N-Ch, 55V, 80A, To-263-3 Rohs Compliant: Yes |Infineon Technologies IPB80N06S2H5ATMA2
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 55V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance5.2 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.4 nF
Max Dual Supply Voltage55 V
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance5.2 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation300 W
Rds On Max5.2 mΩ
Rise Time23 ns
Turn-Off Delay Time48 ns
Turn-On Delay Time23 ns
Dimensions
Height4.4 mm
Length10 mm
Width9.25 mm