Infineon IPB80N06S2H5ATMA2

Name: Infineon IPB80N06S2H5ATMA2
Brand: Infineon
SKU: IPB80N06S2H5ATMA2

Power MOSFET, N Channel, 55 V, 80 A, 0.0052 ohm, TO-263 (D2PAK), Surface Mount

$ 1.835

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价格与库存

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Distributor	SKU		Min	Pkg
Newark	IPB80N06S2H5ATMA2	295	1	Cut Tape	5.080	3.530	2.730	2.250	2.250
Rochester Electronics	IPB80N06S2H5ATMA2	584					1.480	1.330	1.250	14h
Arrow Electronics	IPB80N06S2H5ATMA2	1,000	1K					2.724	2.724
Avnet	IPB80N06S2H5ATMA2	0	1K					1.422	1.358	16h
Mouser	726-IPB80N06S2H5ATMA	5,890	1	Tape & Reel	4.780	3.140	2.340	1.770	1.700

数据表和文档

下载 Infineon IPB80N06S2H5ATMA2 的数据表和制造商文档。

IHS

Datasheet8 页20 年前

iiiC

库存历史记录

3 个月趋势:

+497%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-03-13

Lifecycle StatusProduction (Last Updated: 5 months ago)

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描述

由其分销商提供的 Infineon IPB80N06S2H5ATMA2 的描述。

Power MOSFET, N Channel, 55 V, 80 A, 0.0052 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

55V, N-Ch, 5.2 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS

Infineon SCT

Mosfet, N-Ch, 55V, 80A, To-263-3 Rohs Compliant: Yes |Infineon Technologies IPB80N06S2H5ATMA2

Newark

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 80A I(D), 55V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon