价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDB8442_F085 | 14,310 | 216 | |||||||||
| Avnet | FDB8442-F085 | 2,400 | 1 | 2d | ||||||||
| Rochester Electronics | FDB8442-F085 | 250,170 | 21h | |||||||||
| Flip Electronics | FDB8442-F085 | 2,400 | 6d | |||||||||
| Microchip USA | FDB8442-F085 | 369 | 600 | Bulk | 14h |
供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-12
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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40V, N-Ch, 4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
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Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
描述
由其分销商提供的 onsemi FDB8442-F085 的描述。
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
N-Channel PowerTrench® MOSFET 40V, 80A, 2.9mΩ
254W(Tc) 20V 4V@ 250¦ÌA 235nC@ 10 V 1N 40V 5m¦¸@ 80A,10V 28A 12.2nF@25V TO-263AB 10.67mm*9.65mm*4.83mm
Power Field-Effect Transistor, 28A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
28A, 40V, 0.0029OHM, N-CHANNEL,
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.9 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time17.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.2 nF
Max Operating Temperature175 °C
Max Power Dissipation254 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation254 W
Rds On Max5 mΩ
Rise Time19.3 ns
Turn-Off Delay Time57 ns
Turn-On Delay Time19.5 ns