供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-07-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-01-31
LTD Date2013-07-31
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描述
由其分销商提供的 Infineon IPB050N06NGATMA1 的描述。
MOSFET N-CH 60V 100A TO-263
Power Field-Effect Transistor, 100A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
OPTLMOS N-CHANNEL POWER MOSFET
N-KANAL POWER MOS
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4.7 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.1 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation300 W
Rds On Max4.7 mΩ
Turn-Off Delay Time59 ns
Turn-On Delay Time21 ns
Dimensions
Height4.5 mm