Infineon AUIRLR3636

Name: Infineon AUIRLR3636
Brand: Infineon
SKU: AUIRLR3636

Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package

$ 2.61

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	AUIRLR3636	0	75	Bulk			2.610	2.610	2.610	18h
Farnell	AUIRLR3636	0	1		1.409*	1.059*	1.059*	1.059*	1.059*	1d
Component Stockers USA	AUIRLR3636	335			99.990	99.990	99.990	99.990	99.990	6d
Win Source	WS-AUIRLR3636	539	40				1.284	1.043	1.043	2h
Worldway Electronics	AUIRLR3636	9,822	7	Tube		0.829	0.803	0.761	0.761	3h

数据表和文档

下载 Infineon AUIRLR3636 的数据表和制造商文档。

IHS

Datasheet10 页10 年前

Datasheet12 页12 年前

Newark

element14 APAC

Farnell

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InfineonAUIRLR3636

InfineonIRLR3636TRPBF

Price @ 1000

$ 2.61

$ 0.753

Stock

33,494

649,016

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

50 A

Threshold Voltage

1 V

2.5 V

Rds On Max

6.8 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

143 W

Input Capacitance

3.779 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-07-13

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon AUIRLR3636 的描述。

Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package

International Rectifier

Single N-Channel 60 V 6.8 mOhm 33 nC Automotive HEXFET® Power Mosfet - DPAK

Future Electronics

Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N CH, 60V, 9A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:143W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)

element14 APAC