供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-08-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRFR1018EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 56A;D-Pak;PD 110W;VGS +/-20
InfineonIRFR3607PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 56A;D-Pak;PD 140W;VGS +/-2
描述
由其分销商提供的 onsemi FDD10AN06A0 的描述。
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
N-Channel 60 V 10.5 mOhm Surface Mount PowerTrench Mosfet TO-252AA
Power Field-Effect Transistor, 11A I(D), 60V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 60V, 50A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):9.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight4.535924 g
Technical
Continuous Drain Current (ID)11 A
Current50 A
Current Rating50 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.84 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation135 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation135 W
Rds On Max10.5 mΩ
Resistance10.5 MΩ
Rise Time79 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time32 ns
Turn-On Delay Time8 ns
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm