价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | FDD13AN06A0-F085CT-ND | 1,400 | 1 | Cut Tape | ||||||||
| Flip Electronics | FDD13AN06A0-F085 | 2,500 | 1h | |||||||||
| Newark | FDD13AN06A0-F085 | 0 | 2500 | Tape & Reel | ||||||||
| Onlinecomponents.com | FDD13AN06A0-F085 | 0 | 625 | Bulk | ||||||||
| Future Electronics | FDD13AN06A0-F085 | 0 | 2500 | Tape & Reel |
供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
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Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
onsemiFDD10AN06A0
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
Diodes Inc.DMTH6009LK3Q-13
Mosfet, N-Ch, 60V, 59A, To-252 Rohs Compliant: Yes |Diodes Inc. DMTH6009LK3Q-13
Diodes Inc.DMT6009LK3-13
Mosfet, N-Ch, 60V, 57A, To-252 Rohs Compliant: Yes |Diodes Inc. DMT6009LK3-13
描述
由其分销商提供的 onsemi FDD13AN06A0-F085 的描述。
N-Channel PowerTrench® MOSFET, 60V, 50A, 13.5mΩ
Trans MOSFET N-CH 60V 9.9A Automotive 3-Pin(2+Tab) DPAK T/R
MOSFETs; FDD13AN06A0-F085; ON SEMICONDUCTOR; 60 V; 9.9 A; 20 V; 115 W
Nmos Dpak 60V 13 Mohm Rohs Compliant: Yes |Onsemi FDD13AN06A0-F085
Power Field-Effect Transistor, 9.9A I(D), 60V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
115W(Tc) 20V 4V@ 250¦ÌA 29nC@ 10 V 1N 60V 13.5m¦¸@ 50A,10V 9.9A,50A 1.35nF@25V TO-252AA 6.73mm*6.22mm*2.39mm
POWER FIELD-EFFECT TRANSISTOR, 9
MOSFET N-CH 60V 9.9A/50A TO252AA
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)9.9 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.35 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation115 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation115 W
Rds On Max13.5 mΩ
Resistance13.5 MΩ
Rise Time77 ns
Turn-Off Delay Time26 ns
Turn-On Delay Time9 ns
Dimensions
Height2.517 mm