备用零件
Price @ 1000
$ 0.52
$ 0.761
$ 0.761
Stock
523,050
568,775
568,775
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
TO-252-3
DPAK
DPAK
Drain to Source Voltage (Vds)
60 V
60 V
60 V
Continuous Drain Current (ID)
99 A
50 A
50 A
Threshold Voltage
2.5 V
2.5 V
2.5 V
Rds On Max
6.8 mΩ
6.8 mΩ
6.8 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
143 W
143 W
143 W
Input Capacitance
3.779 nF
3.779 nF
3.779 nF
描述
由其分销商提供的 Infineon IRLR3636PBF 的描述。
Single N-Channel 60 V 6.8 mOhm 33 nC HEXFET® Power Mosfet - TO-252-3
MOSFET, 60V, 99A, 6.8 MOHM, 33 NC QG, LOGIC LEVEL, D-PAK
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 99A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH 60V 50A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:143W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:99A; Package / Case:D-PAK; Power Dissipation Pd:143W; Power Dissipation Pd:143W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)99 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance8.3 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time96 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.779 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation143 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance6.8 mΩ
Package Quantity3000
Power Dissipation143 W
Rds On Max6.8 mΩ
Resistance6.8 MΩ
Rise Time216 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time43 ns
Turn-On Delay Time45 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
合规声明