Infineon IRF7665S2TRPBF
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 0.98
Stock
200,420
0
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
4.1 A
4.1 A
Threshold Voltage
4 V
4 V
Rds On Max
62 mΩ
62 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
30 W
30 W
Input Capacitance
515 pF
515 pF
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
Descrições
Descrições de Infineon IRF7665S2TRPBF fornecidas pelos seus distribuidores.
Trans MOSFET N-CH Si 100V 14.4A 6-Pin Direct-FET SB T/R
A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes., MG-WDSON-4, RoHS
Infineon SCT
MOSFET, N-CH, 100V, 14.4A, SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14.4A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied
Benefits: RoHS Compliant; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Class-D Audio Amplifier Applications; Low Qg for better THD and improved efficiency; Low Qrr for better THD and improved efficiency; Low package stray inductance for reduced ringing and lower EMI | Target Applications: AC-DC; Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4.1 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance62 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time3.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance515 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation30 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance62 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation30 W
Rds On Max62 mΩ
Rise Time6.4 ns
Threshold Voltage4 V
Turn-Off Delay Time7.1 ns
Turn-On Delay Time3.8 ns
Dimensions
Height508 µm
Length4.826 mm
Width3.9624 mm
Conformidade
Classificação ambiental
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade