onsemi FQD19N10TM

MOSFET Transistor, N Channel, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
EOL
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DistributorSKUMinPkg
Farnell
2
FQD19N10TM01Cut Tape
22h
Win SourceWS-1324646.46040
23h
Worldway ElectronicsFQD19N10TM9.1787Tape & Reel
22h
AztechFQD19N10TM245
19h
LCSCC9037296081
8h

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IHS

Datasheet8 páginas12 anos atrás
Datasheet0 páginashá 0 anos

onsemi

Fairchild Semiconductor

element14 APAC

DigiKey

Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-19
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descrições

Descrições de onsemi FQD19N10TM fornecidas pelos seus distribuidores.

MOSFET Transistor, N Channel, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
Newark
N-Channel Power MOSFET, QFET®, 100 V, 15.6 A, 63 mΩ, DPAK
onsemi
N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3
Future Electronics
Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
MOSFET, N-CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
Farnell
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Fairchild Semiconductor

Imagens

element14 APAC
TME
RS
Conrad
Future Electronics
Rochester Electronics

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