Vishay SIHF5N50D-E3
$ 0.685
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-03
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
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Descriptions
Descriptions of Vishay SIHF5N50D-E3 provided by its distributors.
MOSFET, N-CH, 500V, 5.3A, TO-220FP; Transistor Polarity:N Channel; Continuous Dr
Trans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) TO-220FP
Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 500V, 5.3A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)5.3 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vds)500 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance325 pF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max1.5 Ω
Rise Time11 ns
Threshold Voltage3 V
Turn-Off Delay Time14 ns
Turn-On Delay Time12 ns
Dimensions
Height9.8 mm
Length10.63 mm
Width4.83 mm
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements