Vishay SI4178DY-T1-GE3
$ 0.253
Production
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Inventory History
3 month trend: +47.73%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SI4178DY-T1-GE3.
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Supply Chain
Country of OriginGermany
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-10
Lifecycle StatusProduction (Last Updated: 5 months ago)
Descriptions
Descriptions of Vishay SI4178DY-T1-GE3 provided by its distributors.
N-Channel 30 V 0.021 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
SI4178DY-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 12 A, 30 V, 8-PIN SOIC
Power Field-Effect Transistor, 12A I(D), 30V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N CH, 30V, 12A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; No. of Pins:8 ;RoHS Compliant: Yes
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: +47.73%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance405 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation2.4 W
Rds On Max21 mΩ
Resistance21 mΩ
Schedule B8541290080
Threshold Voltage2.8 V
Turn-Off Delay Time12 ns
Turn-On Delay Time7 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SI4178DY-T1-GE3.
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements