Vishay IRLD024PBF

Name: Vishay IRLD024PBF
Brand: Vishay
SKU: IRLD024PBF

Single N-Channel 60 V 0.1 Ohms Through Hole Power Mosfet - HVMDIP-4

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLD024PBF	0	2500	Bulk					1.130	8h
TTI Asia	IRLD024PBF	Contact							0.820	1d
TTI Europe	IRLD024PBF	0	100	Tube						20h
Farnell	IRLD024PBF	0	1		1.935*	1.465*	1.371*	1.135*	1.135*	16h
element14 APAC	IRLD024PBF	0	1		1.322*	0.947*	0.748*	0.527*	0.498*	1d

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Datasheets & Documents

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Upverter

Datasheet9 pages3 years ago

Newark

element14 APAC

element14

RS (Formerly Allied Electronics)

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Supply Chain

Country of OriginIsrael

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1990-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-11-18

LTD Date2025-05-18

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Descriptions

Descriptions of Vishay IRLD024PBF provided by its distributors.

Single N-Channel 60 V 0.1 Ohms Through Hole Power Mosfet - HVMDIP-4

Future Electronics

MOSFET N-CH 60V 2.5A 4-DIP / Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP

Win Source

Transistor: unipolar, N-MOSFET; 60V; 2.5A; 1.3W; DIP4

Fly-Wing Technology

POWER MOSFET Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

N Channel Mosfet, 60V, 2.5A, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.5A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

Newark

MOSFET, N, LOGIC, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; Device Marking:IRLD024PBF; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Pulse Current Idm:20A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V

element14 APAC