Vishay IRFD9110PBF

Name: Vishay IRFD9110PBF
Brand: Vishay
SKU: IRFD9110PBF

Single P-Channel 100 V 1.2 Ohms Through Hole Power Mosfet - HVMDIP-4

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFD9110PBF	0	2500	Bulk					1.050	3h
TTI Asia	IRFD9110PBF	Contact							0.719	5h
element14 APAC	IRFD9110PBF	0	1		1.126*	0.806*	0.636*	0.448*	0.424*	1d
Farnell	IRFD9110PBF	0	1		1.882*	1.438*	1.112*	1.089*	1.089*	2h
Microchip USA	IRFD9110PBF	1,565	3K	Bulk					0.722	7d

Inventory History

3 month trend: -100%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRFD9110PBF.

Newark

Datasheet9 pages4 years ago

Datasheet9 pages14 years ago

Datasheet8 pages21 years ago

Datasheet8 pages16 years ago

Datasheet9 pages9 years ago

Datasheet9 pages11 years ago

element14 APAC

RS (Formerly Allied Electronics)

TME

iiiC

Inventory History

3 month trend:

-100%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1993-09-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2008-06-30

LTD Date2008-09-30

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Descriptions

Descriptions of Vishay IRFD9110PBF provided by its distributors.

Single P-Channel 100 V 1.2 Ohms Through Hole Power Mosfet - HVMDIP-4

Future Electronics

MOSFET P-CH 100V 0.7A 4-DIP | Siliconix / Vishay IRFD9110PBF

RS (Formerly Allied Electronics)

POWER MOSFET Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

P Channel Mosfet, -100V, 700Ma Hd-1; Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:700Ma; On Resistance Rds(On):1.2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

Newark

MOSFET, P, DIL; Transistor Polarity:P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DIP; No. of Pins:4; Current Id Max:-700mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:5.6A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V

element14 APAC