Vishay IRF9630SPBF
$ 1.34
Production
Inventory History
3 month trend: -21.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusProduction (Last Updated: 9 months ago)
Related Parts
InfineonIRF630NSTRLPBF
MOSFET N-CH 200V 9.3A D2PAK N-Channel 200 V 9.3A (Tc) 82W (Tc) Surface Mount D2PAK
Descriptions
Descriptions of Vishay IRF9630SPBF provided by its distributors.
Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220
Vishay PChannel EnhancedMOSTube, Vds=200 V, 6.5 A, D2PAK (TO-263)encapsulation, surface mount, 3Pin
Mosfet P-Channel 200V Rohs Compliant: No
P CH MOSFET, -200V, 6.5A, D2-PAK
POWER MOSFET Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: -21.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance800 mΩ
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3 W
Rds On Max800 mΩ
Rise Time27 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time28 ns
Turn-On Delay Time12 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.02 mm
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements