Infineon IRF630NSTRLPBF

Name: Infineon IRF630NSTRLPBF
Brand: Infineon
SKU: IRF630NSTRLPBF

Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK

$ 1.59

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF630NSTRLPBF	0	16	Bulk			1.660	1.590	1.590	8h
Farnell	3	IRF630NSTRLPBF	0	1	Cut Tape	1.392*	1.058*	1.058*	1.058*	1.058*	12h
Component Stockers USA		IRF630NSTRLPBF	3,742			0.530	0.530	0.500	0.530	0.530	>1wk
Weyland Electronics Group Pte. Ltd.		IRF630NSTRLPBF	2,562	1	Tape & Reel	0.331	0.331	0.331	0.331	0.331	17h
Win Source	2	WS-IRF630NS	15,324	105					0.378	0.378	18h

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF630NSTRLPBF.

IHS

Datasheet11 pages15 years ago

Farnell

Newark

iiiC

Jameco

CAD Models

Download Infineon IRF630NSTRLPBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
EE Concierge	SymbolFootprint
SnapEDA	Footprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

InfineonIRF630NSTRLPBF

InfineonIRF630NSPBF

Price @ 1000

$ 1.59

$ 1.33

Stock

629,235

122,057

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

200 V

Continuous Drain Current (ID)

9.3 A

Threshold Voltage

4 V

Rds On Max

300 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

82 W

Input Capacitance

575 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-10-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-12-31

LTD Date2024-06-30

Related Parts

onsemiFQB10N20CTM

TRANS MOSFET N-CH 200V 9.5A 3PIN D2PAK

Details

VishayIRF9640STRLPBF

Single P-Channel 200 V 0.5 Ohms Surface Mount Power Mosfet - D2PAK-3

Details

VishayIRF9640SPBF

Single P-Channel 200 V 0.5 Ohms Surface Mount Power Mosfet - D2PAK-3

Details

InfineonIRF6215STRLPBF

MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;D2Pak;PD 110W;VGS +/-20V

Details

InfineonIRFS4020TRLPBF

Single N-Channel 200 V 105 mOhm 29 nC HEXFET® Power Mosfet - D2PAK

Details

STMicroelectronicsSTB19NF20

N-channel 200 V, 0.11 Ohm typ., 15 A MESH OVERLAY Power MOSFET in D2PAK package

Details

Descriptions

Descriptions of Infineon IRF630NSTRLPBF provided by its distributors.

Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) | MOSFET N-CH 200V 9.3A D2PAK

Win Source

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R

Verical

IRF630NSTRLPBF,MOSFET, 200V, 9 .5A, 300 MOHM, 23.3 NC QG, D2

Jameco

HEXFET POWER MOSFET Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Tra; N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.3 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 27 / Turn-ON Delay Time ns = 7.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 82

Distrelec