Vishay IRF530SPBF
$ 0.768
Production
Inventory History
3 month trend: +29.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 6 months ago)
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Descriptions
Descriptions of Vishay IRF530SPBF provided by its distributors.
Single N-Channel 100 V 0.16 Ohms Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK
POWER MOSFET Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 100V, 14A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: +29.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.946308 g
Technical
Continuous Drain Current (ID)14 A
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance670 pF
Max Operating Temperature175 °C
Max Power Dissipation88 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max160 mΩ
Resistance160 mΩ
Rise Time34 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements