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Texas Instruments TLC083CD

Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70
$ 1.384

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Texas Instruments TLC083CD.

Texas Instruments

Datasheet52 pages11 years ago
Official datasheet0 pages0 years ago
Datasheet54 pages15 years ago
Technical Drawing2 pages15 years ago
Datasheet50 pages18 years ago

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Inventory History

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Alternate Parts

Price @ 1000
$ 1.384
$ 1.27
Stock
277,361
560,768
Authorized Distributors
2
3
Case/Package
SOIC
SOIC
Number of Pins
14
14
Number of Circuits
2
2
Slew Rate
-
16 V/µs
Gain Bandwidth Product
10 MHz
10 MHz
Input Offset Voltage (Vos)
390 µV
390 µV
Power Supply Rejection Ratio (PSRR)
-
-
Common Mode Rejection Ratio
80 dB
80 dB
Min Supply Voltage
-
4.5 V
Max Supply Voltage
-
16 V
Operating Supply Current
1.9 mA
1.9 mA

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Descriptions

Descriptions of Texas Instruments TLC083CD provided by its distributors.

Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70
IC OPAMP GP 2 CIRCUIT 14SOIC General Purpose Amplifier 2 Circuit 14-SOIC
Operational Amplifier (Op-Amp) IC; No. of Amplifiers:2; Op Amp Type:Wideband; Gain Bandwidth -3db:10MHz; Slew Rate:16V/µs; Supply Voltage Min:4.5V; Supply Voltage Max:16V; No. of Pins:14; Operating Temperature Range:0°C to +70°C ;RoHS Compliant: Yes
The first members of TI's new Bi Mos general-purpose operational amplifier family are the TLC08x. The BiMOSfamily concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16V across commercial (0oC to 70oC) and an extended industrial temperature range (-40oC to 125oC), Bi Mos suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD(TM) packages and shutdown modes, enable higher levels of performance in a variety of applications. Developed in TI's patented LBC3 Bi CMOS process, the new Bi Mos amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x BiFET predecessors include abandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/\Delta Hz (an improvement of 60%). DC improvements include an ensured VICR that includes ground, a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive +-50-mA loads comfortably from anultrasmall-footprint MSOP Power Pad package, which positions the TLC08x as the ideal high-performance general-purpose operational amplifier family.

Manufacturer Aliases

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  • TI
  • TEXAS
  • TEXAS INST
  • TEXAS INSTR
  • TEXAS INSTRUMENT
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  • TEXAS INS
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  • TEXAS INSTRUMEN
  • TI/NS
  • TEX
  • Texas Instruments (TI)
  • TEXASIN
  • TEXAS INSTRUMENTS INCORPORATED
  • TEXINS
  • TEXAS INTRUMENTS
  • TEAXS
  • TEXASI
  • TI Texas Instruments
  • TEXAS INSTRUM
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  • TEXAS INSRUMENT
  • TEXAS INSTUMENTS
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  • Texas Instr.
  • Texas Instruments Inc.