Texas Instruments CSD25211W1015

-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection 6-DSBGA -55 to 150
$ 0.316
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Datasheets & Documents

Download datasheets and manufacturer documentation for Texas Instruments CSD25211W1015.

Texas Instruments

Official datasheet0 pages0 years ago
Technical Drawing4 pages11 years ago
Datasheet13 pages12 years ago
Datasheet11 pages12 years ago
Datasheet10 pages14 years ago

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Supply Chain

Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)

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Descriptions

Descriptions of Texas Instruments CSD25211W1015 provided by its distributors.

-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection 6-DSBGA -55 to 150
1W(Ta) 6V 1.1V@250µA 4.1nC@4.5V P-Ch MOSFET 20V 33mΩ@1.5A,4.5V 3.2A 570pF@10V BGA SMD 1.5mm × 1mm × 625μm
Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R
Small Signal Field-Effect Transistor, -3.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-CH JFET, -20V, 3.2A, 33mR, WLP 1x1.5mm, Surface Mount
MOSFET PCh NexFET Power MOSFET
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain-Source On Resistance: .044 ohm; Moisture Sensitivity Level (MSL): 1;

Manufacturer Aliases

Texas Instruments has several brands around the world that distributors may use as alternate names. Texas Instruments may also be known as the following names:

  • TI
  • TEXAS
  • TEXAS INST
  • TEXAS INSTR
  • TEXAS INSTRUMENT
  • TEXAS INSTRUMENTS INC
  • TEXAS INS
  • TEXAS INSTRU
  • TEXAS INSTRUMEN
  • TI/NS
  • TEX
  • Texas Instruments (TI)
  • TEXASIN
  • TEXAS INSTRUMENTS INCORPORATED
  • TEXINS
  • TEXAS INTRUMENTS
  • TEAXS
  • TEXASI
  • TI Texas Instruments
  • TEXAS INSTRUM
  • TEXAS USD
  • TEXAS INSRUMENTS
  • TEXAS INSRUMENT
  • TEXAS INSTUMENTS
  • TI-ROHS
  • Texas Instr.
  • Texas Instruments Inc.