STMicroelectronics STW7NK90Z
$ 2.06
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW7NK90Z.
CAD Models
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Related Parts
STMicroelectronicsSTW5NK100Z
N-CHANNEL 1000V - 3 Ohm - 3.5A - TO-247 ZENER-PROTECTED SUPERMESH MOSFET
STMicroelectronicsSTW12NK90Z
N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET
Descriptions
Descriptions of STMicroelectronics STW7NK90Z provided by its distributors.
N-channel 900V - 1.56Ohm - 5.8A - TO-247 Zener-protected SuperMESH(TM) Power MOSFET
Transistor MOSFET N-CH 900V 5.8A 3-Pin (3+Tab) TO-247 Tube
N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-247 package
Ciiva
STW7NK90Z N-CHANNEL MOSFET TRANSISTOR, 5.8 A, 900 V, 3-PIN TO-247
900 V-5.8 A-1.56 OHM-TO-247 ZENER-PROTECTED SUPERMESH N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
STMicroelectronics NChannel EnhancedMOSTube MDmesh, SuperMESHseries, Vds=900 V, 5.8 A, TO-247encapsulation, Through hole mounting, 3Pin
MOSFET, N CH, 900V, 5.8A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.9A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V;
Mosfet, N Channel, 900V, 5.8A, To-247; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:2.9A; Tensión Drenaje-Fuente Vds:900V; Resistencia De Activación Rds(On):1.56Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STW7NK90Z
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.8 A
Current Rating5.8 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.35 nF
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation140 W
Rds On Max2 Ω
Resistance2 Ω
Rise Time45 ns
Threshold Voltage3.75 V
Turn-Off Delay Time20 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)900 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW7NK90Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant