STMicroelectronics STW26NM60N
$ 3.24
Production
Inventory History
3 month trend: +1.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-04-29
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STW26NM60N provided by its distributors.
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 package
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 20A TO-247
STW26NM60N N-CHANNEL MOSFET TRANSISTOR, 20 A, 600 V, 3-PIN TO-247
Single N-Channel 600 V 140 W 60 nC MDmesh Through Hole Mosfet - TO-247-3
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics STW26NM60N.
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +1.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance165 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation140 W
Rds On Max165 mΩ
Resistance165 mΩ
Rise Time25 ns
Threshold Voltage3 V
Turn-Off Delay Time85 ns
Turn-On Delay Time13 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant