STMicroelectronics STW26NM50
$ 6.049
Production
Inventory History
3 month trend: -40.21%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW26NM50.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 months ago)
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N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package
STMicroelectronicsSTW34NM60ND
N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) TO-247
onsemiFCH125N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-247
Descriptions
Descriptions of STMicroelectronics STW26NM50 provided by its distributors.
N-Channel 500V - 0.1Ohm - 26A - TO-247 Zener-Protected MDmesh(TM) POWER MOSFET
N-Channel 500 V 120 mOhm Flange Mount MDmesh Power Mosfet - TO-247
MOSFET, N-CH, VDSS 500V, RDS(ON) 0.1OHM, ID 30A, TO-247,PD 313W, VGS +/-30V, GFS 20S
Power Field-Effect Transistor, 30A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
313W(Tc) 30V 5V@ 250µA 106nC@ 10V 1individualNChannel 500V 120mΩ@ 13A,10V 30A 3nF@25V TO-247-3 Through hole mounting 15.75mm*5.15mm*20.15mm
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -40.21%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight9.071847 g
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation240 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation313 W
Rds On Max120 mΩ
Resistance120 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time13 ns
Turn-On Delay Time28 ns
Voltage Rating (DC)500 V
Dimensions
Height24.45 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW26NM50.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant