STMicroelectronics STW21N90K5
$ 3.913
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Inventory History
3 month trend: -1.46%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-05
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STW21N90K5 provided by its distributors.
N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in TO-247 package
Power Field-Effect Transistor, 17A I(D), 900V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
250W(Tc) 30V 5V@ 100µA 43nC@ 10 V 1individualNChannel 900V 299mΩ@ 9A,10V 18.5A 1.645nF@100V TO-247-3 Through hole mounting 24.45mm(height)
Mosfet, N-Ch, 900V, 18.5A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:18.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STW21N90K5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -1.46%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance299 mΩ
Drain to Source Voltage (Vdss)900 V
Fall Time40 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.645 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation210 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation250 W
Rds On Max299 mΩ
Resistance299 MΩ
Rise Time27 ns
Threshold Voltage4 V
Turn-Off Delay Time52 ns
Turn-On Delay Time17 ns
Dimensions
Height24.45 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant