STMicroelectronics STW18NM80
$ 3.712
Production
Inventory History
3 month trend: -27.92%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW18NM80.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-04-20
Lifecycle StatusProduction (Last Updated: 3 months ago)
Related Parts
STMicroelectronicsSTW20N95K5
N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package
Descriptions
Descriptions of STMicroelectronics STW18NM80 provided by its distributors.
N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-247 package
N-Channel MOSFET 800V 17A 295mΩ@8.5A,10V 30V 5V@250µA 70nC@10V 2.07nF@50V TO-247-3 TH 24.45mm H
STW18NM80 N-CHANNEL MOSFET TRANSISTOR, 17 A, 800 V, 3-PIN TO-247
Single N-Channel 800 V 190 W 70 nC Silicon Through Hole Mosfet - TO-247-3
Power Field-Effect Transistor, 17A I(D), 800V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N Channel Power Mosfet, Mdmesh, 800V, 17A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Power Dissipation:190W; Msl:- Rohs Compliant: Yes |Stmicroelectronics STW18NM80
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -27.92%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance295 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.07 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage800 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation190 W
Rds On Max295 mΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time96 ns
Turn-On Delay Time18 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW18NM80.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant