STMicroelectronics STW20NM60FD
N-channel 600V 0.26 Ohm 20A TO-247 Fdmesh™ Power Mosfet
$ 3.46
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Inventory History
3 month trend: -19.13%
CAD Models
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Alternate Parts
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Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW20NM60FD.
CAD Models
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Related Parts
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N-channel 500 V, 0.23 Ohm, 17 A SuperMESH(TM) Power MOSFET Zener-protected TO-247
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N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 23 A, 165 mΩ, TO-247
Descriptions
Descriptions of STMicroelectronics STW20NM60FD provided by its distributors.
N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET
STW20NM60FD N-CHANNEL MOSFET TRANSISTOR, 20 A, 600 V, 3-PIN TO-247
N-CHANNEL 600V-0.26 OHM-20A TO-247 FDMESH POWER MOSFET (WITH FAST DIODE) Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
STMicroelectronics NChannel EnhancedMOSTube FDmeshseries, Vds=600 V, 20 A, TO-247encapsulation, Through hole mounting, 3Pin
MOSFET, N CH, 600V, 20A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.26ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -19.13%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation214 W
Min Breakdown Voltage600 V
Min Operating Temperature-65 °C
Number of Channels1
Number of Elements1
Power Dissipation214 W
Rds On Max290 mΩ
Resistance290 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-On Delay Time25 ns
Voltage Rating (DC)600 V
Dimensions
Height24.45 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW20NM60FD.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant