STMicroelectronics STW11NK90Z
$ 3.389
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW11NK90Z.
CAD Models
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Related Parts
STMicroelectronicsSTW12NK90Z
N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET
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N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-247 package
STMicroelectronicsSTW12NK95Z
N-CHANNEL 950V - 0.72 Ohm - 10A - TO-247 Zener-Protected SuperMESH™ Power MOSFET
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InfineonSPW11N80C3FKSA1
Power MOSFET, General Purpose, N Channel, 800 V, 11 A, 0.39 ohm, TO-247, Through Hole
Descriptions
Descriptions of STMicroelectronics STW11NK90Z provided by its distributors.
Power MOSFET, N Channel, 900 V, 9.2 A, 980 Milliohms, TO-247, 3 Pins, Through Hole
STW11NK90Z N-CHANNEL MOSFET TRANSISTOR, 9.2 A, 900 V, 3-PIN TO-247
N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package
STMicroelectronics NChannel EnhancedMOSTube MDmesh, SuperMESHseries, Vds=900 V, 9.2 A, TO-247encapsulation, Through hole mounting, 3Pin
MOSFET, N CH, 900V, 9.2A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.2A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 0.82ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V;
Mosfet, N Ch, 900V, 9.2A, To-247; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:9.2A; Tensión Drenaje-Fuente Vds:900V; Resistencia De Activación Rds(On):0.82Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STW11NK90Z
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9.2 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance980 mΩ
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3 nF
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation200 W
Rds On Max980 mΩ
Rise Time19 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time76 ns
Turn-On Delay Time30 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW11NK90Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant