onsemi FQPF9N90CT

Name: onsemi FQPF9N90CT
Brand: onsemi
SKU: FQPF9N90CT

MOSFET, N CH, 900V, 1.12OHM, 8A, TO-220F-3; Transistor Polarity: N Channel; Conti

$ 1.89

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Distributor		SKU		Min	Pkg
Arrow Electronics		FQPF9N90CT	67,000	50		2.113	1.883	1.883
Verical	2	FQPF9N90CT	67,000	50		1.883	1.883	1.883
Master Electronics		FQPF9N90CT	3,000	50		1.740	1.660	1.630
Onlinecomponents.com		FQPF9N90CT	3,000	50	Bulk	1.740	1.660	1.630
Rochester Electronics		FQPF9N90CT	20			1.900	1.700	1.600	23h

Inventory History

3 month trend: +0.80%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQPF9N90CT.

Upverter

Technical Drawing1 page5 years ago

Newark

IHS

onsemi

Factory Futures

Inventory History

3 month trend:

+0.80%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-09-03

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQPF9N90CT provided by its distributors.

MOSFET, N CH, 900V, 1.12OHM, 8A, TO-220F-3; Transistor Polarity:N Channel; Conti

Newark

Power MOSFET, N-Channel, QFET®, 900 V, 8 A, 1.4 Ω, TO-220F

onsemi

TRANSISTOR, N-CHANNEL, QFET MOSFET, 900V, 8.0A, 1.4 OHM AT VGS 10V, TO-220

RS (Formerly Allied Electronics)

N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220F

Future Electronics

Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220F Rail

Verical

Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N CH, 900V, 8A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:68W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor