STMicroelectronics STP2NK90Z
$ 0.916
Production
Inventory History
3 month trend: -0.05%
CAD Models
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Alternate Parts
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Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP2NK90Z.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-05
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of STMicroelectronics STP2NK90Z provided by its distributors.
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
STP2NK90Z N-CHANNEL MOSFET TRANSISTOR, 2.1 A, 900 V, 3-PIN TO-220
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in TO-220 package
Ciiva
Trans MOSFET N-CH 900V 2.1A 3-Pin(3+Tab) TO-220AB Tube
900V 2.1A 70W 6.5´Î@10V1.05A 4.5V@50Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.1A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 6.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
The SuperMESH(TM) series is obtained through an extreme optimization of ST's well established strip based PowerMESH(TM) layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh(TM) products.
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.05%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.1 A
Current Rating2.1 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance6.5 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance485 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max6.5 Ω
Resistance5 Ω
Rise Time11 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time43 ns
Turn-On Delay Time21 ns
Voltage Rating (DC)900 V
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP2NK90Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant