STMicroelectronics STP33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220 package
$ 2.138
Production
Inventory History
3 month trend: -56.69%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP33N60M2.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-13
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Descriptions
Descriptions of STMicroelectronics STP33N60M2 provided by its distributors.
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220 package
MOSFET 600V 25A 190W(Tc) 125mΩ@13A,10V 4V@250µA 45.5nC@10V 1.781nF@100V TO-220 TH 9.15mm H
Single N-Channel 650 V 0.125 O 190 W Flange Mount Power Mosfet - TO-220-3
Power Field-Effect Transistor, 26A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 600V, 26A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 26A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.108ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -56.69%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)26 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.781 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage600 V
Min Operating Temperature-50 °C
Number of Channels1
Number of Elements1
Power Dissipation190 W
Rds On Max125 mΩ
Rise Time9.6 ns
Schedule B8541290080
Turn-Off Delay Time109 ns
Turn-On Delay Time16 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP33N60M2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant