STMicroelectronics STP180N10F3
$ 2.581
Obsolete
Price and Stock
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SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -0.03%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP180N10F3.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-08-01
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2022-04-02
LTD Date2022-10-02
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Descriptions
Descriptions of STMicroelectronics STP180N10F3 provided by its distributors.
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
315W(Tc) 20V 4V@ 250µA 114.6nC@ 10 V 1individualNChannel 100V 5.1mΩ@ 60A,10V 120A 6.665nF@25V TO-220 Through hole mounting
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.03%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.8 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time6.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.665 nF
Max Operating Temperature175 °C
Max Power Dissipation315 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation315 W
Rds On Max5.1 mΩ
Resistance5.1 MΩ
Rise Time97.1 ns
Schedule B8541290080
Turn-Off Delay Time99.9 ns
Turn-On Delay Time25.6 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP180N10F3.
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant