STMicroelectronics STP11N65M2
$ 0.787
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-05-16
Lifecycle StatusProduction (Last Updated: 6 months ago)
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Descriptions
Descriptions of STMicroelectronics STP11N65M2 provided by its distributors.
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220AB Tube
Extremely low gate charge | MOSFET N-CH 650V 7A TO-220AB
Power Field-Effect Transistor, 7A I(D), 650V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
85W(Tc) 25V 4V@ 250¦ÌA 12.5nC@ 10 V 1individualNChannel 650V 670m¦¸@ 3.5A,10V 7A 410pF@100V TO-220 Through hole mounting 9.15mm(height)
MOSFET, N CHANNEL, 650V, 7A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance680 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance410 pF
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max670 mΩ
Rise Time7.5 ns
Threshold Voltage3 V
Turn-Off Delay Time26 ns
Turn-On Delay Time9.5 ns