STMicroelectronics STP110N8F6
N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
$ 0.75
Obsolete
Inventory History
3 month trend: -19.20%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP110N8F6.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descriptions
Descriptions of STMicroelectronics STP110N8F6 provided by its distributors.
N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
Trans MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 80V 110A TO-220
Single N-Channel 80 V 200 W 150 nC Silicon Through Hole Mosfet - TO-220-3
Power Field-Effect Transistor, 110A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
200W(Tc) 20V 4.5V@ 250µA 150nC@ 10 V 1individualNChannel 80V 6.5mΩ@ 55A,10V 110A 9.13nF@40V TO-220 Through hole mounting 9.15mm(height)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -19.20%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)110 A
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)80 V
Input Capacitance9.13 nF
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max6.5 mΩ
Schedule B8541290080
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP110N8F6.