STMicroelectronics STP10NK80Z
$ 1.738
Production
Inventory History
3 month trend: -3.45%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP10NK80Z.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STP10NK80Z provided by its distributors.
N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-220 package
N-Channel 800 V 0.9 Ohm Flange Mount SuperMESH Power MosFet - TO-220
Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-220AB Tube
Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-220, Through Hole
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.78ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -3.45%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.18 nF
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation160 W
Rds On Max900 mΩ
Resistance900 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time65 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)800 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP10NK80Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant