STMicroelectronics STF6N60M2
$ 0.66
Production
Inventory History
3 month trend: -0.90%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF6N60M2.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STF6N60M2 provided by its distributors.
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in TO-220FP package
STF6N60M2 N-channel MOSFET Transistor, 4.5 A, 650 V, 3-Pin TO-220FP
N-Channel 600 V 1.2 Ohm Flange Mount MDmesh II Plus Mosfet - TO-220FP
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220FP Tube
20W(Tc) 25V 4V@ 250¦ÌA 8nC@ 10 V 1N 600V 1.2¦¸@ 2.25A,10V 4.5A 232pF@100V TO-220FP
600V 4.5A 20W 1.2¦¸@10V,2.25A 4V@250¦ÌA N Channel TO-220F(TO-220IS) MOSFETs ROHS
Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 600V, 4.5A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STF6N60M2
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.90%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time22.5 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance232 pF
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation20 W
Rds On Max1.2 Ω
Rise Time7.4 ns
Turn-Off Delay Time24 ns
Turn-On Delay Time9.5 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF6N60M2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant