STMicroelectronics STF40N60M2
$ 2.576
Production
Inventory History
3 month trend: +6.70%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF40N60M2.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-25
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Descriptions
Descriptions of STMicroelectronics STF40N60M2 provided by its distributors.
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP package
Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 34A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
40W(Tc) 25V 4V@ 250µA 57nC@ 10 V 1individualNChannel 600V 88mΩ@ 17A,10V 34A 2.5nF@100V TO-220FP Through hole mounting 16.4mm(height)
Mosfet, N-Ch, 600V, 34A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STF40N60M2
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +6.70%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance88 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.5 nF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max88 mΩ
Rise Time13.5 ns
Schedule B8541290080
Turn-Off Delay Time96 ns
Turn-On Delay Time20.5 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF40N60M2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant