STMicroelectronics STP40N60M2
$ 2.608
Production
Inventory History
3 month trend: +28.06%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP40N60M2.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-07-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
STMicroelectronicsSTF40N60M2
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTF34NM60ND
N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) TO-220FP
STMicroelectronicsSTF34NM60N
N-channel 600 V, 0.092 Ohm, 29 A, MDmesh(TM) II Power MOSFET in TO-220FP
Descriptions
Descriptions of STMicroelectronics STP40N60M2 provided by its distributors.
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package
Single N-Channel 650 V 0.088 O 250 W Flange Mount Power Mosfet - TO-220-3
250W(Tc) 25V 4V@ 250¦ÌA 57nC@ 10 V 1N 600V 88m¦¸@ 17A,10V 34A 2.5nF@100V TO-220
Power Field-Effect Transistor, 34A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 34A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +28.06%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance88 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation250 W
Rds On Max88 mΩ
Rise Time13.5 ns
Threshold Voltage2 V
Turn-Off Delay Time96 ns
Turn-On Delay Time20.5 ns
Dimensions
Height19.68 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP40N60M2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant